bat 15-05w oct-07-1999 1 silicon schottky diode ? dbs mixer applications up to 12 ghz ? low noise figure ? low barrier type 1 3 vso05561 2 bat 15-05w eha07179 3 12 a1 a2 c1/c2 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package bat 15-05w s5s 1=a1 2=a2 3=c1/c1 sot-323 maximum ratings parameter symbol value unit diode reverse voltage v r 4 v forward current i f 110 ma total power dissipation , t s = 55 c p tot 100 mw junction temperature t j 150 c operating temperature range c -55 ... 150 t op storage temperature t st g -55 ... 150 c thermal resistance junction - ambient 1) r thja 1090 k/w junction - soldering point r thjs 930 1) package mounted on alumina 15mm x 17.6mm x 0.7mm)
bat 15-05w oct-07-1999 2 electrical characteristics at t a = 25 c, unless otherwise specified. parameter symbol unit values max. typ. min. dc characteristics breakdown voltage i (br) = 5 a v - v (br) 4 - 0.23 - - - v f forward voltage i f = 1 ma i f = 10 ma 0.32 0.4 mv ? v f - - forward voltage matching 1) i f = 10 ma 20 ac characteristics diode capacitance v r = 0 v, f = 1 mhz c t - - 0.35 pf forward resistance if = 10ma / 50ma r f - 5.5 - ? 1) ? v f is difference between lowest and highest v f in component
bat 15-05w oct-07-1999 3 forward current i f = f ( v f ) t a = parameter 0.0 10 ehd07079 f f v 10 10 10 10 a -40 ?c t a = 0.5 1.0 v m -2 -1 0 1 2 25 85 125 ?c ?c ?c reverse current i r = f ( v r ) t a = parameter 0 10 ehd07081 r r v 10 10 10 10 a 125 c t a = 85 25 1234 v -1 0 1 2 3 c c diode capacitance c t = f ( v r ) f = 1mhz 0 0.0 ehd07082 c t r v 2v4 0.2 0.4 pf 0.5 0.1 0.3
|
